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Title: Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

Patent ·
OSTI ID:873105
 [1]
  1. 10328 Pinehurst Ave., Omaha, NE 68124
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Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Research Organization:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
DOE Contract Number:
FG47-93R701314
Assignee:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
Patent Number(s):
US 6091128
OSTI ID:
873105
Country of Publication:
United States
Language:
English

References (6)

Etched Schottky-barrier m.o.s.f.e.t.s using a single mask journal January 1971
Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer journal December 1976
Metallurgical and electrical properties of chromium silicon interfaces journal January 1980
Compound formation between amorphous silicon and chromium journal December 1980
SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain journal January 1968
The metal-semiconductor contact: an old device with a new future journal March 1970

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