Method of forming buried oxide layers in silicon
- Pleasantville, NY
- Lenoir City, TN
A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- US 6090689
- OSTI ID:
- 873103
- Country of Publication:
- United States
- Language:
- English
The reduction of dislocations in oxygen implanted silicon‐on‐insulator layers by sequential implantation and annealing
|
journal | May 1988 |
Low dose SIMOX and impact of ITOX process on quality of SOI film
|
conference | January 1997 |
A recent study of the formation of SIMOX/SOI materials and their device applications
|
conference | January 1997 |
Similar Records
Buried oxide layer in silicon
Formation of ultrathin, buried oxides in Si by O{sup +} ion implantation
Related Subjects
forming
buried
oxide
layers
silicon
process
silicon-on-insulator
described
incorporating
steps
implantation
oxygen
substrate
elevated
temperature
implanting
below
200
degree
dose
form
amorphous
layer
annealing
mixture
defective
single
crystal
polycrystalline
continuous
surface
provide
isolated
superficial
overcomes
islands
discontinuous
buried oxide
oxide layers
silicon layer
temperature below
amorphous silicon
elevated temperature
silicon substrate
single crystal
oxide layer
polycrystalline silicon
silicon oxide
crystalline silicon
annealing steps
annealing step
crystal silicon
superficial layer
layer below
forming silicon-on-insulator
forming silicon
implanting oxygen
oxide form
defective single
described incorporating
/438/117/