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Title: Method of forming buried oxide layers in silicon

Abstract

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Inventors:
 [1];  [2]
  1. (Pleasantville, NY)
  2. (Lenoir City, TN)
Publication Date:
Research Org.:
LOCKHEED MARTIN ENRGY SYST INC
OSTI Identifier:
873103
Patent Number(s):
US 6090689
Assignee:
International Business Machines Corporation (Armonk, NY) ORNL
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; buried; oxide; layers; silicon; process; silicon-on-insulator; described; incorporating; steps; implantation; oxygen; substrate; elevated; temperature; implanting; below; 200; degree; dose; form; amorphous; layer; annealing; mixture; defective; single; crystal; polycrystalline; continuous; surface; provide; isolated; superficial; overcomes; islands; discontinuous; buried oxide; oxide layers; silicon layer; temperature below; amorphous silicon; elevated temperature; silicon substrate; single crystal; oxide layer; polycrystalline silicon; silicon oxide; crystalline silicon; annealing steps; annealing step; crystal silicon; superficial layer; layer below; forming silicon-on-insulator; forming silicon; implanting oxygen; oxide form; defective single; described incorporating; /438/117/

Citation Formats

Sadana, Devendra Kumar, and Holland, Orin Wayne. Method of forming buried oxide layers in silicon. United States: N. p., 2000. Web.
Sadana, Devendra Kumar, & Holland, Orin Wayne. Method of forming buried oxide layers in silicon. United States.
Sadana, Devendra Kumar, and Holland, Orin Wayne. Sat . "Method of forming buried oxide layers in silicon". United States. doi:. https://www.osti.gov/servlets/purl/873103.
@article{osti_873103,
title = {Method of forming buried oxide layers in silicon},
author = {Sadana, Devendra Kumar and Holland, Orin Wayne},
abstractNote = {A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}

Patent:

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