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Title: Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices

Abstract

Efficient thermophotovoltaic conversion can be performed using photovoltaic devices with a band gap in the 0.75-1.4 electron volt range, and selective infrared emitters chosen from among the rare earth oxides which are thermally stimulated to emit infrared radiation whose energy very largely corresponds to the aforementioned band gap. It is possible to use thermovoltaic devices operating at relatively high temperatures, up to about 300.degree. C., without seriously impairing the efficiency of energy conversion.

Inventors:
 [1]
  1. Auburn, AL
Publication Date:
Research Org.:
Auburn Univ., AL (United States)
OSTI Identifier:
873026
Patent Number(s):
US 6072116
Assignee:
Auburn University (Auburn, AL)
DOE Contract Number:  
AC03-98SF21557
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermophotovoltaic; conversion; selective; infrared; line; emitters; band; gap; photovoltaic; devices; efficient; performed; 75-1; electron; volt; range; chosen; rare; earth; oxides; thermally; stimulated; emit; radiation; energy; corresponds; aforementioned; thermovoltaic; operating; relatively; temperatures; 300; degree; seriously; impairing; efficiency; volt range; earth oxides; photovoltaic devices; earth oxide; band gap; rare earth; photovoltaic device; infrared radiation; energy conversion; thermally stimulated; photovoltaic conversion; electron volt; gap photovoltaic; thermophotovoltaic conversion; /136/

Citation Formats

Brandhorst, Jr., Henry W., and Chen, Zheng. Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices. United States: N. p., 2000. Web.
Brandhorst, Jr., Henry W., & Chen, Zheng. Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices. United States.
Brandhorst, Jr., Henry W., and Chen, Zheng. 2000. "Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices". United States. https://www.osti.gov/servlets/purl/873026.
@article{osti_873026,
title = {Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices},
author = {Brandhorst, Jr., Henry W. and Chen, Zheng},
abstractNote = {Efficient thermophotovoltaic conversion can be performed using photovoltaic devices with a band gap in the 0.75-1.4 electron volt range, and selective infrared emitters chosen from among the rare earth oxides which are thermally stimulated to emit infrared radiation whose energy very largely corresponds to the aforementioned band gap. It is possible to use thermovoltaic devices operating at relatively high temperatures, up to about 300.degree. C., without seriously impairing the efficiency of energy conversion.},
doi = {},
url = {https://www.osti.gov/biblio/873026}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}