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Title: Method of making AlInSb by metal-organic chemical vapor deposition

Patent ·
OSTI ID:873022
 [1];  [1];  [1]
  1. Albuquerque, NM
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A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6071109
OSTI ID:
873022
Country of Publication:
United States
Language:
English

References (9)

Growth of AlSb on insulating substrates by metal organics chemical vapour deposition journal March 1980
Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD journal September 1988
Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor journal June 1991
Mbe Growth of Strained-Layer InSb/InAlSb Structures journal January 1990
Demonstration of quantum confinement in InSb‐In 1− x Al x Sb multiquantum wells using photoluminescence spectroscopy journal August 1994
The growth of AlInSb by metalorganic chemical vapor deposition journal June 1998
Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition journal February 1996
Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb journal September 1995
Metalorganic precursors for vapour phase epitaxy journal April 1993

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method
alinsb
metal-organic
chemical
vapor
deposition
producing
aluminum-indium-antimony
materials
mocvd
provides
1-x
sb
crystalline
source
material
supplied
gas
heated
substrate
chamber
decomposing
partially
below
525
degree
produce
002
crystalline materials
crystalline material
source material
chemical vapor
vapor deposition
heated substrate
metal-organic chemical
organic chemical
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