skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Integrated resonant tunneling diode based antenna

Patent ·
OSTI ID:872947

An antenna comprising a plurality of negative resistance devices and a method for making same comprising employing a removable standoff layer to form the gap between the microstrip antenna metal and the bottom contact layer.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6049308
OSTI ID:
872947
Country of Publication:
United States
Language:
English

References (9)

0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunneling diodes journal August 1994
Power and stability limitations of resonant tunneling diodes journal July 1990
Active integrated antennas journal December 1994
High frequency simulation of resonant tunneling diodes journal July 1994
Tactical systems applications for terahertz devices conference June 1994
Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes journal October 1989
Terahertz source requirements for molecular spectroscopy conference June 1994
Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes journal May 1991
Submillimeter source needs for NASA missions conference June 1994