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Title: Thermophotovoltaic energy conversion system having a heavily doped n-type region

Abstract

A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

Inventors:
 [1];  [1];  [1]
  1. Clifton Park, NY
Publication Date:
Research Org.:
Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY
OSTI Identifier:
872931
Patent Number(s):
US 6043426
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermophotovoltaic; energy; conversion; heavily; doped; n-type; region; tpv; semiconductor; device; provided; incorporates; consequence; improved; efficiency; emitter; layer; opposed; base; contact; highly; cap; formed; embodiment; takes; doped n-type; cap layer; emitter layer; heavily doped; conversion efficiency; energy conversion; semiconductor device; base layer; highly doped; n-type region; conversion device; thermophotovoltaic energy; photovoltaic energy; /136/

Citation Formats

DePoy, David M, Charache, Greg W, and Baldasaro, Paul F. Thermophotovoltaic energy conversion system having a heavily doped n-type region. United States: N. p., 2000. Web.
DePoy, David M, Charache, Greg W, & Baldasaro, Paul F. Thermophotovoltaic energy conversion system having a heavily doped n-type region. United States.
DePoy, David M, Charache, Greg W, and Baldasaro, Paul F. Sat . "Thermophotovoltaic energy conversion system having a heavily doped n-type region". United States. https://www.osti.gov/servlets/purl/872931.
@article{osti_872931,
title = {Thermophotovoltaic energy conversion system having a heavily doped n-type region},
author = {DePoy, David M and Charache, Greg W and Baldasaro, Paul F},
abstractNote = {A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.},
doi = {},
url = {https://www.osti.gov/biblio/872931}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Patent:

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