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Title: Method for surface passivation and protection of cadmium zinc telluride crystals

Patent ·
OSTI ID:872930
 [1];  [2];  [3];  [4]
  1. 5640 Hobart St., Apt. #9, Pittsburg, PA 15217
  2. 5420 Lenore Ave., Livermore, CA 94550
  3. 8 Carleton Dr., Mount Lebanon, PA 15243
  4. 3707 Carrigan Common, Livermore, CA 94550

A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Mescher, Mark J. (5640 Hobart St., Apt. #9, Pittsburg, PA 15217);James, Ralph B. (5420 Lenore Ave., Livermore, CA 94550);Schlesinger, Tuviah E. (8 Carleton Dr., Mount Lebanon, PA 15243);Hermon, Haim (3707 Carrigan Common, Livermore, CA 94550)
Patent Number(s):
US 6043106
OSTI ID:
872930
Country of Publication:
United States
Language:
English

References (5)

Performance of CdZnTe coplanar-grid gamma-ray detectors journal June 1996
Low‐temperature photoluminescence of detector grade Cd 1− x Zn x Te crystal treated by different chemical etchants journal September 1996
Investigation of electrical contacts for Cd/sub 1-x/Zn/sub x/Te nuclear radiation detector journal June 1997
Stress Control in Sputtered Silicon Nitride Films journal January 1997
Study of oxidized cadmium zinc telluride surfaces journal May 1997