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Title: High numerical aperture ring field projection system for extreme ultraviolet lithography

Patent ·
OSTI ID:872886
 [1]
  1. 218 Eastridge Dr., San Ramon, CA 84583-4905
+ Show Author Affiliations

An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 .mu.m.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
DOE Contract Number:
W-7405-ENG-48
Assignee:
Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 84583-4905)
Patent Number(s):
US 6033079
OSTI ID:
872886
Country of Publication:
United States
Language:
English

References (4)

Design of reflective relay for soft x-ray lithography conference January 1991
Reflective systems design study for soft x-ray projection lithography journal November 1990
EUV optical design for a 100-nm CD imaging system
  • Sweeney, Donald W.; Hudyma, Russell M.; Chapman, Henry N.
  • 23rd Annual International Symposium on Microlithography, SPIE Proceedings https://doi.org/10.1117/12.309559
conference June 1998
Optical system design issues in development of projection camera for EUV lithography conference May 1995

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Related Subjects

numerical
aperture
field
projection
extreme
ultraviolet
lithography
all-refelctive
optical
photolithography
camera
source
euv
radiation
wafer
mask
imaged
concave
mirror
third
convex
fourth
fifth
sixth
configured
five
six
mirrors
receives
chief
ray
incidence
angle
substantially
12
degree
15
reflecting
surfaces
aspheric
departure
14
refelecting
16
mirrors receives
numerical aperture
reflecting surfaces
aspheric departure
ultraviolet lithography
extreme ultraviolet
reflecting surface
concave mirror
six mirrors
chief ray
convex mirror
euv radiation
six reflecting
incidence angle
sixth concave
third convex
fifth convex
field projection
fourth concave
projection photolithography
photolithography camera
mirrors receive
lithography camera
/359/378/