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Title: Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

Abstract

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

Inventors:
 [1];  [2]
  1. Kingston, TN
  2. Oak Ridge, TN
Publication Date:
Research Org.:
LOCKHEED MARTIN ENERGY RES COR
OSTI Identifier:
872849
Patent Number(s):
US 6023082
Assignee:
Lockheed Martin Energy Research Corporation (Oak Ridge, TN)
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
strain-based; control; crystal; anisotropy; perovskite; oxides; semiconductor-based; material; crystalline; structure; semiconductor; device; substrate; film; anisotropic; epitaxially; arranged; surface; couples; underlying; geometries; substantially; unit; cells; predisposed; orientation; relative; predisposition; responsible; directional-dependent; quality; dipole; moment; cell; influenced; stressed; strained; condition; lattice; interface; semiconductor-based material; predisposed orientation; underlying substrate; crystalline material; unit cells; substrate surface; semiconductor device; crystalline structure; film material; unit cell; orientation relative; perovskite oxides; dipole moment; perovskite oxide; line structure; /257/

Citation Formats

McKee, Rodney Allen, and Walker, Frederick Joseph. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material. United States: N. p., 2000. Web.
McKee, Rodney Allen, & Walker, Frederick Joseph. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material. United States.
McKee, Rodney Allen, and Walker, Frederick Joseph. Sat . "Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material". United States. https://www.osti.gov/servlets/purl/872849.
@article{osti_872849,
title = {Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material},
author = {McKee, Rodney Allen and Walker, Frederick Joseph},
abstractNote = {A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Patent:

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