Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

Patent · 01 January 2000

OSTI ID:872849

McKee, Rodney Allen ^[1]; Walker, Frederick Joseph ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

• Research Organization: LOCKHEED MARTIN ENERGY RES COR
• DOE Contract Number: AC05-96OR22464
• Assignee: Lockheed Martin Energy Research Corporation (Oak Ridge, TN)
• Patent Number(s): US 6023082
• OSTI ID: 872849
• Country of Publication: United States
• Language: English

Related Subjects

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anisotropic
anisotropy
arranged
cell
cells
condition
control
couples
crystal
crystalline
crystalline material
crystalline structure
device
dipole
dipole moment
directional-dependent
epitaxially
film
film material
geometries
influenced
interface
lattice
line structure
material
moment
orientation
orientation relative
oxides
perovskite
perovskite oxide
perovskite oxides
predisposed
predisposed orientation
predisposition
quality
relative
responsible
semiconductor
semiconductor device
semiconductor-based
semiconductor-based material
strain-based
strained
stressed
structure
substantially
substrate
substrate surface
surface
underlying
underlying substrate
unit
unit cell
unit cells