High resolution three-dimensional doping profiler

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872778

Thundat, Thomas G ^[1]; Warmack, Robert J ^[1]

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1. Knoxville, TN

A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: Lockheed Martin Energy Research Corporation (Oakridge, TN)
• Patent Number(s): US 6005400
• OSTI ID: 872778
• Country of Publication: United States
• Language: English

Related Subjects

resolution
three-dimensional
doping
profiler
semiconductor
provides
schottky
contact
surface
ohmic
contacts
coupled
power
source
establishing
electrical
bias
localized
light
illuminates
induce
photocurrent
changes
accordance
characteristics
illuminated
region
changing
voltage
depth
depletion
layer
varied
provide
dimensional
view
local
properties
electrical bias
power source
light source
ohmic contact
source illuminates
semiconductor doping
doping profile
doping profiler
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