Photoresist composition for extreme ultraviolet lithography

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872688

Felter, T E ^[1]; Kubiak, G D ^[1]

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1. Alameda County, CA

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Livermore, CA)
• Patent Number(s): US 5989776
• OSTI ID: 872688
• Country of Publication: United States
• Language: English

Related Subjects

photoresist
composition
extreme
ultraviolet
lithography
method
producing
patterned
array
features
particular
gate
apertures
size
range
4-0
05
projection
euv
radiation
energy
laser
beam
vaporize
target
material
produce
plasma
produces
characteristic
wavelength
13
nm
lithographic
applications
transmitted
series
reflective
mirrors
mask
bears
pattern
printed
demagnified
focused
means
appropriate
optics
single
exposure
substrate
coated
photoresists
designed
transparent
satisfy
conventional
processing
methods
boron
carbide
polymers
hydrochlorocarbons
mixtures
processing methods
processing method
reflective mirrors
size range
projection lithography
ultraviolet lithography
boron carbide
ultraviolet radiation
laser beam
extreme ultraviolet
target material
substrate coated
euv radiation
energy laser
single exposure
satisfy conventional
appropriate optics
produces extreme
photoresists designed
photoresist composition
lithographic applications
patterned array
conventional processing
characteristic wavelength
mask pattern
reflective mirror
gate apertures
focused mask
conventional process
demagnified focused
target mater
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