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Title: Deposition of dopant impurities and pulsed energy drive-in

Abstract

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Walnut Creek, CA)
  2. (Mountain View, CA)
  3. (San Ramon, CA)
  4. (Fremont, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
872363
Patent Number(s):
US 5918140
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
deposition; dopant; impurities; pulsed; energy; drive-in; semiconductor; doping; process; enhances; incorporation; achievable; gas; immersion; laser; gild; technique; enhanced; achieved; depositing; layer; atoms; surface; followed; exposure; pulses; ion-beam; melt; portion; desired; depth; causing; incorporated; molten; region; recrystallizes; electrically; active; deposited; plasma; chemical; vapor; pecvd; techniques; pulsed energy; enhanced chemical; plasma enhanced; chemical vapor; vapor deposition; semiconductor surface; deposition techniques; electrically active; desired depth; deposition technique; semiconductor doping; laser doping; dopant impurities; doping process; /438/

Citation Formats

Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., and Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States: N. p., 1999. Web.
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., & Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States.
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., and Ellingboe, Albert R. Fri . "Deposition of dopant impurities and pulsed energy drive-in". United States. https://www.osti.gov/servlets/purl/872363.
@article{osti_872363,
title = {Deposition of dopant impurities and pulsed energy drive-in},
author = {Wickboldt, Paul and Carey, Paul G. and Smith, Patrick M. and Ellingboe, Albert R.},
abstractNote = {A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

Patent:

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