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Title: Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

Abstract

A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.

Inventors:
 [1];  [2];  [1]
  1. Golden, CO
  2. Boulder, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
871684
Patent Number(s):
US 5776819
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
deposition; device; quality; hydrogen; content; amorphous; silicon; films; hot; filament; technique; safe; source; gas; method; producing; hydrogenated; substrate; flowing; stream; diluted; silane; past; heated; silicon films; silicon source; hydrogen content; silicon film; device quality; amorphous silicon; hydrogenated amorphous; producing hydrogen; hot filament; silane gas; producing hydrogenated; source gas; heated filament; filament technique; /438/148/427/

Citation Formats

Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas. United States: N. p., 1998. Web.
Mahan, Archie Harvin, Molenbroek, Edith C, & Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas. United States.
Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Thu . "Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas". United States. https://www.osti.gov/servlets/purl/871684.
@article{osti_871684,
title = {Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas},
author = {Mahan, Archie Harvin and Molenbroek, Edith C and Nelson, Brent P},
abstractNote = {A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.},
doi = {},
url = {https://www.osti.gov/biblio/871684}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

Patent:

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