Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

Title: Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

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Abstract

A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.

Inventors:

Mahan, Archie Harvin ^[1]; Molenbroek, Edith C ^[2]; Nelson, Brent P ^[1]

Golden, CO
Boulder, CO

Publication Date:: 1998-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 871684

Patent Number(s):: US 5776819

Assignee:: Midwest Research Institute (Kansas City, MO)

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: deposition; device; quality; hydrogen; content; amorphous; silicon; films; hot; filament; technique; safe; source; gas; method; producing; hydrogenated; substrate; flowing; stream; diluted; silane; past; heated; silicon films; silicon source; hydrogen content; silicon film; device quality; amorphous silicon; hydrogenated amorphous; producing hydrogen; hot filament; silane gas; producing hydrogenated; source gas; heated filament; filament technique; /438/148/427/

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                    Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas.  United States: N. p., 1998. 
        Web.

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                    Mahan, Archie Harvin, Molenbroek, Edith C, & Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas.  United States.

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                    Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Thu .  
        "Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas".  United States.  https://www.osti.gov/servlets/purl/871684.

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@article{osti_871684,

  title        = {Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas},

  author       = {Mahan, Archie Harvin and Molenbroek, Edith C and Nelson, Brent P},

  abstractNote = {A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/871684},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {1}

}

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Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas

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