Silicon on insulator with active buried regions

Patent · 02 June 1998

OSTI ID:871598

McCarthy, Anthony M ^[1]

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1. Menlo Park, CA

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5760443
• Application Number: 08/547080
• OSTI ID: 871598
• Country of Publication: United States
• Language: English

Related Subjects

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activating
active
active buried
additionally
bonding
buried
buried components
buried regions
carried
collectors
components
contact
desired
desired pattern
devices
dopant
doped
doped regions
drains
electrical
electrical contact
epitaxially
epitaxially growing
etch
etch stop
exposed
form
forming
forming electrical
forming patterned
growing
insulator
insulator substrate
introducing
introducing dopant
involves
involves forming
layer
layers
masking
method
method additionally
multiple
pattern
patterned
patterned buried
regions
removing
sequence
silicon
silicon layer
silicon substrate
silicon-on-insulator
single
soi
sources
stop
stop layer
substrate
suitable
suitable sequence
top layer