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Title: Variable temperature semiconductor film deposition

Abstract

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Inventors:
 [1];  [2]
  1. (Golden, CO)
  2. (Lakewood, CO)
Publication Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
871346
Patent Number(s):
US 5712187
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
variable; temperature; semiconductor; film; deposition; method; depositing; material; substrate; sequentially; comprises; providing; depositable; vapor; heating; sufficient; form; layer; grain; size; continually; cooling; deposited; raising; continuing; deposit; third; anneal; layers; single; favorable; efficiency; characteristics; photovoltaic; applications; preferred; cadmium; telluride; glass; oxide; thereon; sulfide; semiconductor film; variable temperature; oxide substrate; film layers; film deposition; single layer; semiconductor material; grain size; temperature sufficient; layer deposited; film layer; cadmium telluride; cadmium sulfide; substrate temperature; photovoltaic applications; sequentially comprises; rate temperature; method sequentially; temperature semiconductor; /438/136/

Citation Formats

Li, Xiaonan, and Sheldon, Peter. Variable temperature semiconductor film deposition. United States: N. p., 1998. Web.
Li, Xiaonan, & Sheldon, Peter. Variable temperature semiconductor film deposition. United States.
Li, Xiaonan, and Sheldon, Peter. Thu . "Variable temperature semiconductor film deposition". United States. https://www.osti.gov/servlets/purl/871346.
@article{osti_871346,
title = {Variable temperature semiconductor film deposition},
author = {Li, Xiaonan and Sheldon, Peter},
abstractNote = {A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

Patent:

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