Ultrafast optical technique for the characterization of altered materials

Maris, Humphrey J

Title: Ultrafast optical technique for the characterization of altered materials

Patent · Tue Jan 06 00:00:00 EST 1998

OSTI ID:871314

Maris, Humphrey J ^[1]

Barrington, RI

Disclosed herein is a method and a system for non-destructively examining a semiconductor sample (30) having at least one localized region underlying a surface (30a) through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in a polarization state of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample's surface and a detector.

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Research Organization:: Brown Univ., Providence, RI (United States)

DOE Contract Number:: FG02-86ER45267

Assignee:: Brown University Research Foundation (Providence, RI)

Patent Number(s):: US 5706094

OSTI ID:: 871314

Country of Publication:: United States

Language:: English

References (30)

Nondestructive detection of titanium disilicide phase transformation by picosecond ultrasonics Lin, H. ‐N.; Stoner, R. J.; Maris, H. J. Applied Physics Letters, Vol. 61, Issue 22 https://doi.org/10.1063/1.108114	journal	November 1992
Study of vibrational modes of gold nanostructures by picosecond ultrasonics Lin, H. ‐N.; Maris, H. J.; Freund, L. B. Journal of Applied Physics, Vol. 73, Issue 1 https://doi.org/10.1063/1.353859	journal	January 1993
Ion implant monitoring with thermal wave technology Smith, W. Lee; Rosencwaig, Allan; Willenborg, David L. Applied Physics Letters, Vol. 47, Issue 6 https://doi.org/10.1063/1.96079	journal	September 1985
Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium Auston, D. H.; Shank, C. V. Physical Review Letters, Vol. 32, Issue 20 https://doi.org/10.1103/PhysRevLett.32.1120	journal	May 1974
Picosecond acoustics as a non-destructive tool for the characterization of very thin films Thomsen, C.; Maris, H. J.; Tauc, J. Thin Solid Films, Vol. 154, Issue 1-2 https://doi.org/10.1016/0040-6090(87)90366-X	journal	November 1987
Sound velocity and index of refraction of AlAs measured by picosecond ultrasonics Grahn, H. T.; Young, D. A.; Maris, H. J. Applied Physics Letters, Vol. 53, Issue 21 https://doi.org/10.1063/1.100309	journal	November 1988
Carrier lifetime versus ion‐implantation dose in silicon on sapphire Doany, F. E.; Grischkowsky, D.; Chi, C. ‐C. Applied Physics Letters, Vol. 50, Issue 8 https://doi.org/10.1063/1.98173	journal	February 1987
Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements Sumie, Shingo; Takamatsu, Hiroyuki; Morimoto, Tsutomu Journal of Applied Physics, Vol. 76, Issue 10 https://doi.org/10.1063/1.357074	journal	November 1994
Measurements of the Kapitza conductance between diamond and several metals Stoner, R. J.; Maris, H. J.; Anthony, T. R. Physical Review Letters, Vol. 68, Issue 10 https://doi.org/10.1103/PhysRevLett.68.1563	journal	March 1992
Time-resolved study of vibrations of a -Ge:H/ a -Si:H multilayers Grahn, H. T.; Maris, H. J.; Tauc, J. Physical Review B, Vol. 38, Issue 9 https://doi.org/10.1103/PhysRevB.38.6066	journal	September 1988
Detection of Thin Interfacial Layers by Picosecond Ultrasonics Tas, G.; Stoner, R. J.; Maris, H. J. MRS Proceedings, Vol. 259 https://doi.org/10.1557/PROC-259-231	journal	January 1992
Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K Stoner, R. J.; Maris, H. J. Physical Review B, Vol. 48, Issue 22 https://doi.org/10.1103/PhysRevB.48.16373	journal	December 1993
Ultrasonic experiments at ultra-high frequency with picosecond time-resolution Lin, H. -N.; Stoner, R. J.; Maris, H. J. IEEE Symposium on Ultrasonics https://doi.org/10.1109/ULTSYM.1990.171573	conference	January 1990
Nondestructive testing of microstructures by picosecond ultrasonics Lin, H. -N.; Stoner, R. J.; Maris, H. J. Journal of Nondestructive Evaluation, Vol. 9, Issue 4 https://doi.org/10.1007/BF00565642	journal	December 1990
Physics of ultrafast phenomena in solid state plasmas Elci, Ahmet; Smirl, Arthur L.; Leung, C. Y. Solid-State Electronics, Vol. 21, Issue 1 https://doi.org/10.1016/0038-1101(78)90130-2	journal	January 1978
Detection of thermal waves through optical reflectance Rosencwaig, Allan; Opsal, Jon; Smith, W. L. Applied Physics Letters, Vol. 46, Issue 11 https://doi.org/10.1063/1.95794	journal	June 1985
Surface generation and detection of phonons by picosecond light pulses Thomsen, C.; Grahn, H. T.; Maris, H. J. Physical Review B, Vol. 34, Issue 6 https://doi.org/10.1103/PhysRevB.34.4129	journal	September 1986
Thermal and plasma wave depth profiling in silicon Opsal, Jon; Rosencwaig, Allan Applied Physics Letters, Vol. 47, Issue 5 https://doi.org/10.1063/1.96105	journal	September 1985
Phonon attenuation and velocity measurements in transparent materials by picosecond acoustic interferometry Lin, H. ‐N.; Stoner, R. J.; Maris, H. J. Journal of Applied Physics, Vol. 69, Issue 7 https://doi.org/10.1063/1.348958	journal	April 1991
Attenuation of longitudinal-acoustic phonons in amorphous ${SiO}_{2}$ at frequencies up to 440 GHz Zhu, T. C.; Maris, H. J.; Tauc, J. Physical Review B, Vol. 44, Issue 9 https://doi.org/10.1103/PhysRevB.44.4281	journal	September 1991
Thin‐film thickness measurements with thermal waves Rosencwaig, Allan; Opsal, Jon; Willenborg, David L. Applied Physics Letters, Vol. 43, Issue 2 https://doi.org/10.1063/1.94267	journal	July 1983
Detection of Titanium Silicide Formation and Phase Transformation by Picosecond Ultrasonics Lin, H. -N.; Stoner, R. J.; Maris, H. J. MRS Proceedings, Vol. 260 https://doi.org/10.1557/PROC-260-221	journal	January 1992
Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CF _x at the Al/Si interface Tas, G.; Stoner, R. J.; Maris, H. J. Applied Physics Letters, Vol. 61, Issue 15 https://doi.org/10.1063/1.108427	journal	October 1992
Picosecond ultrasonics Grahn, H. T.; Maris, H. J.; Tauc, J. IEEE Journal of Quantum Electronics, Vol. 25, Issue 12 https://doi.org/10.1109/3.40643	journal	January 1989
Picosecond optical studies of amorphous diamond and diamondlike carbon: Thermal conductivity and longitudinal sound velocity Morath, Christopher J.; Maris, Humphrey J.; Cuomo, Jerome J. Journal of Applied Physics, Vol. 76, Issue 5 https://doi.org/10.1063/1.357560	journal	September 1994
Picosecond spectroscopy of semiconductors Auston, D. H.; McAfee, S.; Shank, C. V. Solid-State Electronics, Vol. 21, Issue 1 https://doi.org/10.1016/0038-1101(78)90129-6	journal	January 1978
Picosecond photoinduced electronic and acoustic effects in a-Si:H based multilayer structures Grahn, H. T.; Vardeny, Z.; Maris, H. J. Journal of Non-Crystalline Solids, Vol. 97-98 https://doi.org/10.1016/0022-3093(87)90205-5	journal	December 1987
Elastic properties of silicon oxynitride films determined by picosecond acoustics Grahn, H. T.; Maris, H. J.; Tauc, J. Applied Physics Letters, Vol. 53, Issue 23 https://doi.org/10.1063/1.100253	journal	December 1988
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors Sumie, Shingo; Takamatsu, Hiroyuki; Nishimoto, Yoshiro Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 11 https://doi.org/10.1143/JJAP.31.3575	journal	November 1992
Studies of High-Frequency Acoustic Phonons Using Picosecond Optical Techniques Maris, H. J.; Thomsen, C.; Tauc, J. Phonon Scattering in Condensed Matter V, p. 374-380 https://doi.org/10.1007/978-3-642-82912-3_105	book	January 1986

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ultrafast
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altered
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disclosed
method
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examining
semiconductor
sample
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localized
region
underlying
surface
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selected
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diffused
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transient
time-varying
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continuous wave
probe beam
pump pulse
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chemical species
optical probe
transmitted intensity
chemical specie
localized region
selected chemical
semiconductor sample
optical technique
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Title: Ultrafast optical technique for the characterization of altered materials

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References (30)

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