Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

Patent ·
OSTI ID:870929
 [1];  [2];  [3];  [4];  [5]
  1. 12700 Indian School Rd. NE., Apt. 604, Albuquerque, NM 87112
  2. 1105 Sagebrush Trail SE., Albuquerque, NM 87123
  3. 12 Timberline Dr., Bridgewater, NJ 08807
  4. 13713 Vic Rd. NE., Albuquerque, NM 87112
  5. 3875 Orange Ct., Boulder, CO 80304
+ Show Author Affiliations
A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.
Research Organization:
AT & T CORP
DOE Contract Number:
AC04-76DP00789
Assignee:
Bryan, Robert P. (12700 Indian School Rd. NE., Apt. 604, Albuquerque, NM 87112);Esherick, Peter (1105 Sagebrush Trail SE., Albuquerque, NM 87123);Jewell, Jack L. (12 Timberline Dr., Bridgewater, NJ 08807);Lear, Kevin L. (13713 Vic Rd. NE., Albuquerque, NM 87112);Olbright, Gregory R. (3875 Orange Ct., Boulder, CO 80304)
Patent Number(s):
US 5625636
OSTI ID:
870929
Country of Publication:
United States
Language:
English

References (10)

Full solid state image converter based on integration of phototransistors and LEDs journal April 1981
Double heterostructure optoelectronic switch as a dynamic memory with low‐power consumption journal February 1988
GaAs-GaAlAs phototransistor/laser light amplifier journal January 1980
Low-threshold electrically pumped vertical-cavity surface-emitting microlasers journal January 1989
A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy journal January 1986
Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes journal January 1991
Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application conference January 1989
Chapter 5 Phototransistors for Lightwave Communications book January 1985
Vertical to surface transmission electrophotonic device with selectable output light channels journal January 1989
InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers journal April 1981

Similar Records

Related Subjects

/372/
active component
active components
applications
arrangements
arrays
cavity
cavity surface
components
computing
configured
connection
device
devices
disclosed
electroactive
electronic
electronic device
electrosensitive
emitting
emitting laser
emitting lasers
enable
feedback
input
integrated
integrates
integration
laser
lasers
means
monolithically
monolithically integrated
network
neural
neural net
neural network
optical
optoelectronic
optoelectronic device
output
parallel
photoactive
photosensitive
provided
sensitive device
series
series connection
side-by-side
surface
surface emitting
vertical
vertical cavity