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Title: Dry etching method for compound semiconductors

Patent ·
OSTI ID:870918
 [1];  [2]
  1. Albuquerque, NM
  2. Safety Harbor, FL
+ Show Author Affiliations

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5624529
Application Number:
08/437532
OSTI ID:
870918
Country of Publication:
United States
Language:
English

References (14)

Anisotropic electron cyclotron resonance etching of GaInP/AlGaInP heterostructures journal May 1994
High‐rate, anisotropic dry etching of InP in HI‐based discharges journal February 1992
Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges journal March 1992
Microwave CI2/H2 discharges for high rate etching of InP journal January 1992
635 nm GaInP/GaAlInP surface‐emitting laser diodes journal December 1993
Electron cyclotron resonance plasma etching of InP in CH 4 /H 2 /Ar journal April 1990
High Rate Anisotropic Aluminum Etching journal June 1983
GaInP/AlGaInP index waveguide-type visible laser diodes with dry-etched mesa stripes journal January 1993
Plasma and wet chemical etching of In0.5Ga0.5P journal April 1992
Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etching journal November 1991
Smooth vertical etching of AlGaInP by Cl2 reactive ion beam etching journal January 1993
Anisotropic reactive ion etching of InP in methane/hydrogen based plasmas journal November 1991
Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropy journal September 1989
Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges journal July 1990

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Related Subjects

dry
etching
method
compound
semiconductors
according
gaseous
plasma
comprising
boron
trichloride
methane
hydrogen
semiconductor
material
containing
layers
including
aluminum
indium
alloy
algainp
anisotropically
etched
forming
electronic
devices
field-effect
transistors
heterojunction
bipolar
photonic
vertical-cavity
surface-emitting
lasers
edge-emitting
reflectance
modulators
material layer
cavity surface
surface-emitting laser
compound semiconductors
boron trichloride
field-effect transistor
vertical-cavity surface-emitting
dry etching
semiconductor material
material containing
compound semiconductor
electronic devices
surface-emitting lasers
material layers
semiconductor alloy
devices including
effect transistor
emitting laser
field-effect transistors
electronic device
bipolar transistors
bipolar transistor
layers including
reflectance modulator
effect transistors
edge-emitting lasers
heterojunction bipolar
forming electronic
including aluminum
including vertical
emitting lasers
gaseous plasma
etching method
anisotropically etched
containing layer
/438/216/252/