Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

Patent · Wed Jan 01 00:00:00 EST 1997

OSTI ID:870842

Tam, Shiu-Wing ^[1]

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1. Downers Grove, IL

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: University of Chicago (Chicago, IL)
• Patent Number(s): US 5605171
• OSTI ID: 870842
• Country of Publication: United States
• Language: English

Related Subjects

porous
silicon
embedded
tritium
stand-alone
prime
power
source
optoelectronic
applications
illumination
comprising
electrons
surface
interticies
total
porosity
range
50
90
disclosed
tritiated
photovoltaic
device
tritiated porous
source comprising
illumination source
porous silicon
power source
photovoltaic device
total porosity
electronic applications
stand-alone prime
optoelectronic applications
embedded tritium
prime power
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