Gamma ray camera
- Berkeley, CA
A gamma ray camera for detecting rays emanating from a radiation source such as an isotope. The gamma ray camera includes a sensor array formed of a visible light crystal for converting incident gamma rays to a plurality of corresponding visible light photons, and a photosensor array responsive to the visible light photons in order to form an electronic image of the radiation therefrom. The photosensor array is adapted to record an integrated amount of charge proportional to the incident gamma rays closest to it, and includes a transparent metallic layer, photodiode consisting of a p-i-n structure formed on one side of the transparent metallic layer, and comprising an upper p-type layer, an intermediate layer and a lower n-type layer. In the preferred mode, the scintillator crystal is composed essentially of a cesium iodide (CsI) crystal preferably doped with a predetermined amount impurity, and the p-type upper intermediate layers and said n-type layer are essentially composed of hydrogenated amorphous silicon (a-Si:H). The gamma ray camera further includes a collimator interposed between the radiation source and the sensor array, and a readout circuit formed on one side of the photosensor array.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Regents, University of California (Oakland, CA)
- Patent Number(s):
- US 5596198
- OSTI ID:
- 870794
- Country of Publication:
- United States
- Language:
- English
|
conference | May 1994 |
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Related Subjects
ray
camera
detecting
rays
emanating
radiation
source
isotope
sensor
array
formed
visible
light
crystal
converting
incident
plurality
corresponding
photons
photosensor
responsive
form
electronic
image
therefrom
adapted
record
integrated
amount
charge
proportional
closest
transparent
metallic
layer
photodiode
consisting
p-i-n
structure
comprising
upper
p-type
intermediate
n-type
preferred
mode
scintillator
composed
essentially
cesium
iodide
csi
preferably
doped
predetermined
impurity
layers
hydrogenated
amorphous
silicon
a-si
collimator
interposed
readout
circuit
intermediate layers
p-type layer
sensor array
structure formed
gamma rays
gamma ray
amorphous silicon
hydrogenated amorphous
visible light
radiation source
intermediate layer
predetermined amount
n-type layer
transparent metal
preferred mode
composed essentially
ray camera
metallic layer
circuit formed
cesium iodide
readout circuit
incident gamma
electronic image
circuit form
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