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Title: Process for producing cadmium sulfide on a cadmium telluride surface

Patent ·
OSTI ID:870538
 [1];  [2];  [1]
  1. Lakewood, CO
  2. Longmont, CO
+ Show Author Affiliations

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:
AC36-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5541118
OSTI ID:
870538
Country of Publication:
United States
Language:
English

References (4)

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation journal July 1987
Nearly ideal electronic properties of sulfide coated GaAs surfaces journal August 1987
Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation journal December 1987
Processing and characterization of large‐grain thin‐film CdTe
  • Nelson, Art J.; Hasoon, F.; Levi, Dean
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 5 https://doi.org/10.1116/1.578947
journal September 1994

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Related Subjects

process
producing
cadmium
sulfide
telluride
surface
layer
employed
photovoltaic
device
comprises
providing
exposed
hydrogen
plasma
exposure
flow
rate
time
temperature
sufficient
permit
reaction
form
accomplish
passivation
addition
heterojunction
interface
formed
thickness
sufficient thickness
comprises providing
flow rate
photovoltaic device
hydrogen sulfide
temperature sufficient
process comprises
cadmium telluride
cadmium sulfide
exposure time
telluride surface
sulfide layer
sulfide form
/438/136/257/427/