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Process for preparing schottky diode contacts with predetermined barrier heights

Patent ·
OSTI ID:870414
 [1];  [2];  [3]
  1. Middleton, WI
  2. Portland, OR
  3. Madison, WI
+ Show Author Affiliations

A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

Research Organization:
University of Wisconsin
DOE Contract Number:
FG02-86ER45274
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
US 5516725
OSTI ID:
870414
Country of Publication:
United States
Language:
English

References (8)

Stable and epitaxial metal/III-V semiconductor heterostructures journal January 1990
Epitaxial growth of GaAs/NiAl/GaAs heterostructures journal April 1988
Hybridised sol-gel process for optical fibres journal January 1987
NiAl/ n ‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing journal April 1988
Reactions of (100) Multilayered Metal Structures Containing Fe Grown on (100) Si journal January 1992
A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts journal January 1992
Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system journal February 1989
Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors journal January 1988

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