Asymmetrical field emitter

Patent · 31 December 1994

OSTI ID:870112

Fleming, James G ^[1]; Smith, Bradley K ^[1]

---

1. Albuquerque, NM

Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 5457355
• OSTI ID: 870112
• Country of Publication: United States
• Language: English

Related Subjects

/313/
anisotropically
appropriate
appropriate values
asymmetrical
asymmetrical emitter
close
close proximity
connected
coupled
electrons
embodiment
emitted
emitter
emitter structure
etched
field
field emitter
form
gate
layer
oxide
oxide layer
parallel
potential
potentials
preferred
preferred embodiment
providing
proximity
separated
sharp
step
structure
substantially
substantially parallel
substrate
surface
tip
top
top surface
values
wall