Surface passivation process of compound semiconductor material using UV photosulfidation
Patent
·
OSTI ID:870072
- Edgewood, NM
A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-76
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 5451542
- OSTI ID:
- 870072
- Country of Publication:
- United States
- Language:
- English
Ultraviolet photosulfidation of III‐V compound semiconductors: A new approach to surface passivation
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journal | May 1994 |
Nearly ideal electronic properties of sulfide coated GaAs surfaces
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journal | August 1987 |
Ultraviolet photoemission studies of GaAs(100) surfaces chemically stabilized by H2S treatments
|
journal | July 1989 |
Ultraviolet photosulfidation of III–V compound semiconductors for electronic passivation
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journal | July 1994 |
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Related Subjects
surface
passivation
process
compound
semiconductor
material
photosulfidation
method
passivating
surfaces
photolytically
disrupting
molecular
sulfur
vapor
ultraviolet
radiation
form
reactive
reacts
passivates
semiconductors
surface passivation
compound semiconductors
ultraviolet radiation
semiconductor material
semiconductor surface
compound semiconductor
semiconductor surfaces
passivation process
surface pass
/438/
passivation
process
compound
semiconductor
material
photosulfidation
method
passivating
surfaces
photolytically
disrupting
molecular
sulfur
vapor
ultraviolet
radiation
form
reactive
reacts
passivates
semiconductors
surface passivation
compound semiconductors
ultraviolet radiation
semiconductor material
semiconductor surface
compound semiconductor
semiconductor surfaces
passivation process
surface pass
/438/