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Title: Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

Patent ·
OSTI ID:870002
 [1];  [2];  [1];  [3];  [4];  [3];  [1]
  1. Denver, CO
  2. Evergreen, CO
  3. Golden, CO
  4. Boulder, CO
+ Show Author Affiliations

A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5436204
Application Number:
08/293,826
OSTI ID:
870002
Country of Publication:
United States
Language:
English

References (5)

A new self-stabilizing selenization process for the formation of CuInSe2 solar cells
  • Delahoy, A. E.; Faras, F.; Sizemore, A.
  • Photovoltaic advanced research and development project, AIP Conference Proceedings https://doi.org/10.1063/1.42910
conference January 1992
Fundamental thermodynamics and experiments in fabricating high efficiency CuInSe2 solar cells by selenization without the use of H2Se conference January 1992
Selenization of metallic Cu‐In thin films for CuInSe 2 solar cells journal December 1989
Large Grain Copper Indium Diselenide Films journal September 1984
Low Pressure Vapor Phase Selenization of Cu-in Films without H2Se book January 1991

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Related Subjects

recrystallization
method
selenization
thin-film
cu
semiconductor
device
applications
process
fabricating
slightly
cu-poor
thin-films
substrate
steps
forming
initially
cu-rich
phase
separated
mixture
solid
form
followed
exposure
overpressure
vapor
deposition
simultaneously
increasing
temperature
550
degree
liquid
flux
terminated
maintained
recrystallize
deposited
transition
z
initial
grain
sequentially
depositing
co-depositing
metal
precursors
ramping
presence
moderate
anneal
450
holding
annealing
period
nonselenizing
100
homogenize
substrates
selenizing
slightly cu-poor
phase separated
metal precursor
film temperature
solid form
device applications
semiconductor device
solid mixture
moderate temperature
recrystallization temperature
temperature anneal
rate temperature
metal precursors
phase separate
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