Visible light emitting vertical cavity surface emitting lasers

Bryan, Robert P; Olbright, Gregory R; Lott, James A

Title: Visible light emitting vertical cavity surface emitting lasers

Patent · Sun Jan 01 00:00:00 EST 1995

OSTI ID:869954

Bryan, Robert P ^[1]; Olbright, Gregory R ^[1]; Lott, James A ^[2]

Boulder, CO
Albuquerque, NM

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

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Research Organization:: AT&T

DOE Contract Number:: AC04-76DP00789

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Number(s):: US 5428634

OSTI ID:: 869954

Country of Publication:: United States

Language:: English

References (15)

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser Schneider, R. P.; Bryan, R. P.; Lott, J. A. Applied Physics Letters, Vol. 60, Issue 15 https://doi.org/10.1063/1.107178	journal	April 1992
Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers Hashimoto, Jun‐ichi; Katsuyama, Tsukuru; Shinkai, Jiro Applied Physics Letters, Vol. 58, Issue 9 https://doi.org/10.1063/1.104492	journal	March 1991
Linewidth, tunability, and VHF-millimeter wave frequency synthesis of vertical-cavity GaAs quantum-well surface-emitting laser diode arrays Olbright, G. R.; Bryan, R. P.; Fu, W. S. IEEE Photonics Technology Letters, Vol. 3, Issue 9 https://doi.org/10.1109/68.84490	journal	September 1991
High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers Lee, Y. H.; Tell, B.; Brown-Goebeler, K. Electronics Letters, Vol. 26, Issue 16 https://doi.org/10.1049/el:19900841	journal	January 1990
Evidence for the existence of an ordered state in Ga _0.5 In _0.5 P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy Gomyo, A.; Suzuki, T.; Kobayashi, K. Applied Physics Letters, Vol. 50, Issue 11 https://doi.org/10.1063/1.98062	journal	March 1987
Low series resistance vertical‐cavity front‐surface‐emitting laser diode Yoo, Hoi‐Jun; Hayes, J. R.; Andreadakis, N. Applied Physics Letters, Vol. 56, Issue 20 https://doi.org/10.1063/1.103029	journal	May 1990
Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes Olbright, G. R.; Bryan, R. P.; Lear, K. Electronics Letters, Vol. 27, Issue 3 https://doi.org/10.1049/el:19910140	journal	January 1991
AlGaInP visible laser diodes grown on misoriented substrates Hamada, H.; Shono, M.; Honda, S. IEEE Journal of Quantum Electronics, Vol. 27, Issue 6 https://doi.org/10.1109/3.89967	journal	June 1991
Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers Lee, Y. H.; Tell, B.; Brown-Goebeler, K. F. IEEE Photonics Technology Letters, Vol. 3, Issue 2 https://doi.org/10.1109/68.76856	journal	February 1991
InGaAs vertical-cavity surface-emitting lasers Geels, R. S.; Corzine, S. W.; Coldren, L. A. IEEE Journal of Quantum Electronics, Vol. 27, Issue 6 https://doi.org/10.1109/3.89952	journal	June 1991
Microlasers Jewell, Jack L.; Harbison, James P.; Scherer, Axel Scientific American, Vol. 265, Issue 5 https://doi.org/10.1038/scientificamerican1191-86	journal	November 1991
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization Jewell, J. L.; Harbison, J. P.; Scherer, A. IEEE Journal of Quantum Electronics, Vol. 27, Issue 6 https://doi.org/10.1109/3.89950	journal	June 1991
Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition Nishikawa, Y.; Tsuburai, Y.; Nozaki, C. Applied Physics Letters, Vol. 53, Issue 22 https://doi.org/10.1063/1.100276	journal	November 1988
Heterojunction band offsets and effective masses in III-V quaternary alloys Krijn, M. P. C. M. Semiconductor Science and Technology, Vol. 6, Issue 1 https://doi.org/10.1088/0268-1242/6/1/005	journal	January 1991
Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells Gourley, P. L.; Drummond, T. J. Applied Physics Letters, Vol. 50, Issue 18 https://doi.org/10.1063/1.97916	journal	May 1987

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Title: Visible light emitting vertical cavity surface emitting lasers

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