Pulsed energy synthesis and doping of silicon carbide

Patent · Sun Jan 01 00:00:00 EST 1995

OSTI ID:869934

Truher, Joel B ^[1]; Kaschmitter, James L ^[2]; Thompson, Jesse B ^[3]; Sigmon, Thomas W ^[4]

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1. San Rafael, CA
2. Pleasanton, CA
3. Brentwood, CA
4. Beaverton, OR

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5425860
• OSTI ID: 869934
• Country of Publication: United States
• Language: English

Related Subjects

pulsed
energy
synthesis
doping
silicon
carbide
method
producing
beta
films
co-depositing
amorphous
carbon
substrate
whereafter
irradiated
exposure
source
excimer
laser
formation
beta-sic
compound
doped
produced
introducing
dopant
gases
irradiation
single
layers
thickness
5-1
micron
thicker
multiple
processing
steps
electron
transport
properties
wide
temperature
range
27
degree
-730
alpha
application
semiconductors
including
hetero-junction
bipolar
transistors
power
devices
bandgap
solar
arrays
ultra-hard
coatings
light
emitting
diodes
sensors
etc
pulsed energy
emitting diodes
emitting diode
single layer
temperature range
amorphous silicon
silicon carbide
energy source
processing steps
light emitting
electron transport
beta silicon
excimer laser
wide temperature
transport properties
processing step
power devices
producing beta
hard coatings
hard coating
bipolar transistors
bipolar transistor
solar array
introducing dopant
temperature semiconductor
temperature semiconductors
dopant gas
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