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Title: Substrate for thin silicon solar cells

Abstract

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Inventors:
 [1]
  1. Evergreen, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
869799
Patent Number(s):
US 5401331
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
substrate; silicon; solar; cells; photovoltaic; device; converting; energy; electrical; signals; comprises; layer; photoconductive; semiconductor; material; grown; alloy; boron; range; atomic; percent; lattice; constant; substantially; matched; resistivity; times; 10; -3; ohm-cm; photoconductive semiconductor; substrate comprises; converting solar; lattice constant; atomic percent; electrical signals; electrical signal; solar cell; semiconductor material; solar energy; solar cells; photovoltaic device; silicon solar; constant substantially; signals comprise; material grown; /136/

Citation Formats

Ciszek, Theodore F. Substrate for thin silicon solar cells. United States: N. p., 1995. Web.
Ciszek, Theodore F. Substrate for thin silicon solar cells. United States.
Ciszek, Theodore F. 1995. "Substrate for thin silicon solar cells". United States. https://www.osti.gov/servlets/purl/869799.
@article{osti_869799,
title = {Substrate for thin silicon solar cells},
author = {Ciszek, Theodore F},
abstractNote = {A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.},
doi = {},
url = {https://www.osti.gov/biblio/869799}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}

Works referenced in this record:

Solar cells from metallurgical silicon zone melted in polycrystalline silicon tubes
journal, September 1982


Improved High‐Purity Arc‐Furnace Silicon for Solar Cells
journal, February 1985


Efficient Solar Cells from Metallurgical-Grade Silicon
journal, January 1980


Silicon by Sodium Reduction of Silicon Tetrafluoride
journal, January 1981


Progress on the Dow Corning Process for Solar-Grade Silicon
book, January 1979