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Title: Nanocrystalline ceramic materials

Abstract

A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

Inventors:
 [1];  [2];  [2]
  1. (Hinsdale, IL)
  2. (Evanston, IL)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
869351
Patent Number(s):
US 5320800
Assignee:
ARCH Development Corporation (Chicago, IL); Northwestern University (Evanston, IL) ANL
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
nanocrystalline; ceramic; materials; method; preparing; treated; metallic; material; preparation; providing; starting; grain; size; 35; nm; compacting; inert; atmosphere; annealing; compacted; temperature; one-half; melting; metallic material; ceramic material; ceramic materials; grain size; inert atmosphere; nanocrystalline metallic; nanocrystalline ceramic; ceramic mater; /419/148/

Citation Formats

Siegel, Richard W., Nieman, G. William, and Weertman, Julia R. Nanocrystalline ceramic materials. United States: N. p., 1994. Web.
Siegel, Richard W., Nieman, G. William, & Weertman, Julia R. Nanocrystalline ceramic materials. United States.
Siegel, Richard W., Nieman, G. William, and Weertman, Julia R. Sat . "Nanocrystalline ceramic materials". United States. https://www.osti.gov/servlets/purl/869351.
@article{osti_869351,
title = {Nanocrystalline ceramic materials},
author = {Siegel, Richard W. and Nieman, G. William and Weertman, Julia R.},
abstractNote = {A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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