Heterojunction solar cell with passivated emitter surface

Patent · Sat Jan 01 00:00:00 EST 1994

OSTI ID:869329

Olson, Jerry M ^[1]; Kurtz, Sarah R ^[2]

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1. Lakewood, CO
2. Golden, CO

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5316593
• OSTI ID: 869329
• Country of Publication: United States
• Language: English

Related Subjects

heterojunction
solar
cell
passivated
emitter
surface
high-efficiency
layer
preferably
52
48
forms
gaas
absorber
passivating
window
defined
composition
disposed
conversion
efficiency
25
substrate
anti-reflection
coating
window layer
heterojunction solar
emitter layer
conversion efficiency
solar cell
absorber layer
anti-reflection coating
junction solar
preferably disposed
passivating layer
defined composition
gaas absorber
emitter surface
/136/257/