Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Patent · Sat Jan 01 00:00:00 EST 1994

OSTI ID:869276

Feng, Zhu ^[1]; Brewer, Marilee ^[2]; Brown, Ian ^[3]; Komvopoulos, Kyriakos ^[4]

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1. Albany, CA
2. Goleta, CA
3. Berkeley, CA
4. Orinda, CA

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5308661
• OSTI ID: 869276
• Country of Publication: United States
• Language: English

Related Subjects

pretreatment
process
forming
smooth
surface
diamond
film
carbon-coated
substrate
disclosed
provide
uniform
density
nucleation
sites
thereon
subsequent
deposition
continuous
application
bias
voltage
comprises
exposing
microwave
plasma
enhanced
chemical
vapor
mixture
hydrogen-methane
gases
methane
gas
concentration
measured
partial
pressure
maintaining
10
30
torr
methane gas
enhanced chemical
plasma enhanced
subsequent deposition
smooth surface
chemical vapor
vapor deposition
process comprises
partial pressure
bias voltage
diamond film
gas concentration
microwave plasma
treatment process
coated substrate
carbon-coated substrate
pretreatment process
nucleation sites
comprises exposing
sites thereon
ethane gas
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