skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Abstract

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Inventors:
 [1];  [2]
  1. (Kingston, TN)
  2. (Oak Ridge, TN)
Publication Date:
Research Org.:
LOCKHEED MARTIN ENRGY SYST INC
OSTI Identifier:
868839
Patent Number(s):
US 5225031
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN) ORNL
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; depositing; oxide; epitaxially; silicon; substrate; structures; prepared; structure; involving; utilizes; ultra; vacuum; molecular; beam; epitaxy; methods; grow; epitaxial; film; surface; grown; lattice; compound; formed; interface; stabilized; base; layer; comprised; sodium; chloride-type; grows; cover; perovskite; render; product; incorporates; electronic; capabilities; technologically-significant; properties; layer comprised; sodium chloride; silicon substrate; substrate surface; molecular beam; base layer; oxide film; lattice structure; beam epitaxy; compound formed; structures prepared; structure involving; compound form; oxide epitaxially; substrate utilize; /428/117/148/427/

Citation Formats

McKee, Rodney A., and Walker, Frederick J. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process. United States: N. p., 1993. Web.
McKee, Rodney A., & Walker, Frederick J. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process. United States.
McKee, Rodney A., and Walker, Frederick J. Fri . "Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process". United States. https://www.osti.gov/servlets/purl/868839.
@article{osti_868839,
title = {Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process},
author = {McKee, Rodney A. and Walker, Frederick J.},
abstractNote = {A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

Patent:

Save / Share: