Determination of interfacial states in solid heterostructures using a variable-energy positron beam

Lynn, Kelvin G

Title: Determination of interfacial states in solid heterostructures using a variable-energy positron beam

Patent · Fri Jan 01 00:00:00 EST 1993

OSTI ID:868733

Lynn, Kelvin G ^[1]

Center Moriches, NY

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

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Research Organization:: Associated Universities, Inc., Upton, NY (United States)

DOE Contract Number:: AC02-76CH00016

Assignee:: Associated Universities, Inc. (Washington, DC)

Patent Number(s):: US 5200619

OSTI ID:: 868733

Country of Publication:: United States

Language:: English

References (12)

Development and use of a thin‐film transmission positron moderator Lynn, K. G.; Nielsen, B.; Quateman, J. H. Applied Physics Letters, Vol. 47, Issue 3 https://doi.org/10.1063/1.96231	journal	August 1985
Study of hydrogen interaction with SiO ₂ /Si(100) system using positrons Asoka‐Kumar, P.; Lynn, K. G.; Leung, T. C. Journal of Applied Physics, Vol. 69, Issue 9 https://doi.org/10.1063/1.348872	journal	May 1991
Reversible interaction of hydrogen with thin layers of thermally grown silicon dioxide Fare, T.; Spetz, A.; Armgarth, M. Journal of Applied Physics, Vol. 63, Issue 11 https://doi.org/10.1063/1.340326	journal	June 1988
An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO ₂ Yeow, Y. T.; Lamb, D. R.; Brotherton, S. D. Journal of Physics D: Applied Physics, Vol. 8, Issue 13 https://doi.org/10.1088/0022-3727/8/13/011	journal	September 1975
Defect annealing studies on metals by positron annihilation and electrical resitivity measurements Mantl, S.; Triftshäuser, W. Physical Review B, Vol. 17, Issue 4 https://doi.org/10.1103/PhysRevB.17.1645	journal	February 1978
Implantation profile of low‐energy positrons in solids Asoka‐Kumar, P.; Lynn, K. G. Applied Physics Letters, Vol. 57, Issue 16 https://doi.org/10.1063/1.104071	journal	October 1990
Microvoids at the ${SiO}_{2}$ /Si interface Nielsen, Bent; Lynn, K. G.; Welch, D. O. Physical Review B, Vol. 40, Issue 2 https://doi.org/10.1103/PhysRevB.40.1434	journal	July 1989
Interaction of positron beams with surfaces, thin films, and interfaces Schultz, Peter J.; Lynn, K. G. Reviews of Modern Physics, Vol. 60, Issue 3 https://doi.org/10.1103/RevModPhys.60.701	journal	July 1988
Interface state behaviour of plasma grown oxides following low temperature annealing Zhang, J. F.; Watkinson, P.; Taylor, S. Applied Surface Science, Vol. 39, Issue 1-4 https://doi.org/10.1016/0169-4332(89)90453-4	journal	October 1989
Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons Schultz, Peter J.; Tandberg, E.; Lynn, K. G. Physical Review Letters, Vol. 61, Issue 2 https://doi.org/10.1103/PhysRevLett.61.187	journal	July 1988
SiO ₂ /Si interface probed with a variable‐energy positron beam Nielsen, Bent; Lynn, K. G.; Chen, Yen‐C Applied Physics Letters, Vol. 51, Issue 13 https://doi.org/10.1063/1.98818	journal	September 1987
Hydrogen interaction with oxidized Si(111) probed with positrons Lynn, K. G.; Nielsen, Bent; Welch, D. O. Canadian Journal of Physics, Vol. 67, Issue 8 https://doi.org/10.1139/p89-141	journal	August 1989

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Title: Determination of interfacial states in solid heterostructures using a variable-energy positron beam

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