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Title: Amorphous silicon radiation detectors

Patent ·
OSTI ID:868545

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of Calif. (Oakland, CA)
Patent Number(s):
US 5164809
OSTI ID:
868545
Country of Publication:
United States
Language:
English

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