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Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets

Patent ·
OSTI ID:868540
 [1];  [2]
  1. Knoxville, TN
  2. Oak Ridge, TN
+ Show Author Affiliations
A method and apparatus for the rapid and economical deposition of uniform and high quality films upon a substrate for subsequent use in producing electronic devices, for example. The resultant films are either epitaxial (crystalline) or amorphous depending upon the incidence rate and the temperature and structure of the substrate. The deposition is carried out in a chamber maintained at about 10.sup.-6 Torr. A gaseous source of the material for forming the deposit is injected into the deposition chamber in the form of a pulsed supersonic jet so as to obtain a high incidence rate. The supersonic jet is produced by a pulsed valve between a relatively high presure reservoir, containing the source gaseous molecules, and the deposition chamber; the valve has a small nozzle orifice (e.g., 0.1-1.0 mm diameter). The type of deposit (crystalline amorphous) is then dependent upon the temperature and structure of the substrate. Very high deposition rates are achieved, and the deposit is very smooth and of uniform thickness. Typically the deposition rate is about 100 times that of much more expensive conventional molecular beam methods for deposition, and comparable to certain expensive plasma-assisted CVD methods of the art. The high growth rate of this method results in a reduced contamination of the deposit from other elements in the environment. The method is illustrated by the deposition of epitaxial and amorphour germanium films upon GaAs substrates.
Research Organization:
LOCKHEED MARTIN ENRGY SYST INC
DOE Contract Number:
AC05-84OR21400
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5164040
OSTI ID:
868540
Country of Publication:
United States
Language:
English

References (5)

Flow-Rate Modulation Epitaxy of GaAs journal December 1985
III–V MBE Growth Systems book January 1985
New approach to the atomic layer epitaxy of GaAs using a fast gas stream journal October 1988
Chemical beam epitaxy of InP and GaAs journal December 1984
Pyrolytic and Laser Photolytic Growth of Crystalline and Amorphous Germanium Films from Digermane (Ge 2 H 6 ) journal January 1988

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