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Controlled growth of semiconductor crystals

Patent ·
OSTI ID:868396
 [1]
  1. Richmond, CA
+ Show Author Affiliations

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5131975
OSTI ID:
868396
Country of Publication:
United States
Language:
English

References (10)

Notizen: Herstellung von InAs- und GaAs-Einkristallen journal June 1956
A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals journal April 1986
A Technique for Pulling Single Crystals of Volatile Materials journal June 1962
Vertical-gradient-freeze growth of GaP journal August 1976
Growth of Low Strain GaP by Liquid-Encapsulation, Vertical-Gradient Freeze Technique journal January 1973
Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals journal April 1965
Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure journal January 1970
Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle journal January 1918
Liquid encapsulated, vertical bridgman growth of large diameter, low dislocation density, semi-insulating GaAs journal March 1989
Vertical gradient freeze growth of gallium arsenide and naphthalene: Theory and practice journal June 1974

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