Hard carbon nitride and method for preparing same

Patent · Wed Jan 01 00:00:00 EST 1992

OSTI ID:868275

Haller, Eugene E ^[1]; Cohen, Marvin L ^[1]; Hansen, William L ^[2]

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1. Berkeley, CA
2. Walnut Creek, CA

Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• Assignee: Regents of University of California (Berkeley, CA)
• Patent Number(s): US 5110679
• OSTI ID: 868275
• Country of Publication: United States
• Language: English

Related Subjects

hard
carbon
nitride
method
preparing
novel
crystalline
alpha
silicon
nitride-like
-carbon
beta
formed
sputtering
presence
nitrogen
atmosphere
single
crystal
germanium
respectively
substrate
hard carbon
silicon nitride
single crystal
nitrogen atmosphere
silicon nitride-
silicon nitride-like
-carbon nitride
/428/204/423/