AlGaAs diode pumped tunable chromium lasers

Patent · Wed Jan 01 00:00:00 EST 1992

OSTI ID:868247

Krupke, William F ^[1]; Payne, Stephen A ^[2]

---

1. Pleasanton, CA
2. Castro Valley, CA

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5105434
• OSTI ID: 868247
• Country of Publication: United States
• Language: English

Related Subjects

algaas
diode
pumped
tunable
chromium
lasers
all-solid-state
laser
disclosed
longwave
pump
absorption
band
utilizing
material
accept
unusually
dopant
concentrations
deleterious
effects
crystal
lattice
compensate
decreased
section
sources
increases
correspondingly
particular
embodiment
doped
colquiriite-structure
lisralf
avoids
associated
algainp
diodes
doping
heavily
enable
efficient
pumping
practical
absorption band
particular embodiment
pump sources
crystal lattice
laser material
deleterious effects
material increases
pump source
chromium doped
deleterious effect
dopant concentrations
diode pump
/372/