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Title: Nonvolatile semiconductor memory having three dimension charge confinement

Abstract

A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

Inventors:
 [1];  [1];  [1];  [1];  [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
AT & T CORP
OSTI Identifier:
868019
Patent Number(s):
US 5055890
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
nonvolatile; semiconductor; memory; dimension; charge; confinement; layered; device; dimensional; comprises; storage; channel; stores; carriers; flow; laterally; source; drain; isolation; material; schottky; barrier; heterojunction; located; trench; upper; layer; controllably; retains; portion; determined; confining; means; retained; time; materials; characteristics; change; voltage; permit; operation; underlying; sense; affected; presence; presences; easily; detected; charge carrier; upper layer; charge carriers; schottky barrier; semiconductor device; nonvolatile semiconductor; memory comprises; easily detected; layered semiconductor; /257/

Citation Formats

Dawson, L Ralph, Osbourn, Gordon C, Peercy, Paul S, Weaver, Harry T, and Zipperian, Thomas E. Nonvolatile semiconductor memory having three dimension charge confinement. United States: N. p., 1991. Web.
Dawson, L Ralph, Osbourn, Gordon C, Peercy, Paul S, Weaver, Harry T, & Zipperian, Thomas E. Nonvolatile semiconductor memory having three dimension charge confinement. United States.
Dawson, L Ralph, Osbourn, Gordon C, Peercy, Paul S, Weaver, Harry T, and Zipperian, Thomas E. Tue . "Nonvolatile semiconductor memory having three dimension charge confinement". United States. https://www.osti.gov/servlets/purl/868019.
@article{osti_868019,
title = {Nonvolatile semiconductor memory having three dimension charge confinement},
author = {Dawson, L Ralph and Osbourn, Gordon C and Peercy, Paul S and Weaver, Harry T and Zipperian, Thomas E},
abstractNote = {A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Patent:

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