SLS complementary logic devices with increase carrier mobility

Patent · 01 January 1991

OSTI ID:867902

Chaffin, Roger J ^[1]; Osbourn, Gordon C ^[1]; Zipperian, Thomas E ^[1]

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1. Albuquerque, NM

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 5031007
• OSTI ID: 867902
• Country of Publication: United States
• Language: English

Related Subjects

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accessible
alleviated
band
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complementary
compositions
comprising
containing
degeneracy
device
device comprising
devices
electronic
electronic device
energy
energy level
energy levels
energy-momentum
high-mobility
holes
improvement
increase
layer
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layer superlattice
layer thickness
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levels
limitation
limited
logic
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low-mobility
manner
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predominantly
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selected
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semiconductor material
sls
space
splits
strain
strained
strained layer
superlattice
thicknesses
type
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valence band
whereby