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Title: Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Abstract

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Inventors:
 [1];  [1];  [1];  [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
AT & T CORP
OSTI Identifier:
867864
Patent Number(s):
US 5023200
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
formation; multiple; levels; porous; silicon; buried; insulators; conductors; device; technologies; method; forming; level; substrate; semiconductor; integrated; circuits; including; anodizing; non-porous; layers; multi-layer; form; layer; oxidized; insulating; beneath; metallized; conductive; preferably; separated; anodization; barrier; formed; etching; subsequently; partially; insulated; conductor; fabricated; single; crystal; silicon device; silicon layer; porous silicon; silicon substrate; integrated circuits; integrated circuit; single crystal; insulating layer; conductive layer; crystal silicon; silicon layers; multiple levels; circuits including; semiconductor integrated; form multiple; multiple level; barrier formed; layer silicon; /438/

Citation Formats

Blewer, Robert S, Gullinger, Terry R, Kelly, Michael J, and Tsao, Sylvia S. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies. United States: N. p., 1991. Web.
Blewer, Robert S, Gullinger, Terry R, Kelly, Michael J, & Tsao, Sylvia S. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies. United States.
Blewer, Robert S, Gullinger, Terry R, Kelly, Michael J, and Tsao, Sylvia S. Tue . "Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies". United States. https://www.osti.gov/servlets/purl/867864.
@article{osti_867864,
title = {Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies},
author = {Blewer, Robert S and Gullinger, Terry R and Kelly, Michael J and Tsao, Sylvia S},
abstractNote = {A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Patent:

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