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Title: Superlattice strain gage

Patent ·
OSTI ID:867314

A strain gage comprising a strained-layer superlattice crystal exhibiting piezoelectric properties is described. A substrate upon which such a strained-layer superlattice crystal has been deposited is attached to an element to be monitored for strain. A light source is focused on the superlattice crystal and the light reflected from, passed through, or emitted from the crystal is gathered and compared with previously obtained optical property data to determine the strain in the element.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
DOE Contract Number:
W-7405-ENG-36
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 4912355
OSTI ID:
867314
Country of Publication:
United States
Language:
English