Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

Patent · Fri Feb 02 00:00:00 EST 1990

OSTI ID:867232

Guha, Subhendu ^[1]; Ovshinsky, Stanford R ^[2]

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1. Troy, MI
2. Bloomfield Hills, MI

A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

• DOE Contract Number: ZB-7-060003-4
• Assignee: Energy Conversion Devices, Inc. (Troy, MI)
• Patent Number(s): US 4891330
• Application Number: 07/174,267
• OSTI ID: 867232
• Country of Publication: United States
• Language: English

Related Subjects

method
fabricating
n-type
p-type
microcrystalline
semiconductor
alloy
material
including
band
gap
widening
elements
doped
element
glow
discharge
deposition
process
subjecting
precursor
mixture
diluent
gas
absence
magnetic
field
sufficient
strength
induce
electron
cyclotron
resonance
precursor mixture
microcrystalline semiconductor
electron cyclotron
band gap
magnetic field
glow discharge
deposition process
material including
cyclotron resonance
sufficient strength
crystalline semiconductor
alloy material
semiconductor alloy
widening element
gap widening
p-type microcrystalline
diluent gas
widening elements
including band
fabricating doped
/438/136/148/427/