Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication
- Edgewood, NM
- Albuquerque, NM
An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4880493
- OSTI ID:
- 867171
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication
Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage
Related Subjects
photochemical
etching
process
semiconductor
device
fabrication
carrying
patterning
selective
removing
material
steps
implanting
dry
thermal
annealing
step
regions
desired
pattern
damaged
remainder
implanted
left
undamaged
rate
recombination
electrons
holes
increased
compared
follows
removed
substantially
faster
representing
leaving
ion-implanted
raised
surface
structures
completion
restore
electrical
conductivity
device fabrication
thermal annealing
dry etching
etching process
chemical etching
semiconductor material
semiconductor device
electrical conductivity
annealing step
desired pattern
photochemical etching
electronic-carrier-controlled photochemical
surface structure
controlled ph
/438/