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Title: Semiconductor bridge (SCB) igniter

Abstract

In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

Inventors:
 [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
AT&T
OSTI Identifier:
866432
Patent Number(s):
US 4708060
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; bridge; scb; igniter; explosive; device; comprising; material; explode; activation; means; contact; therewith; electrical; adaptable; activating; explodes; circuitry; operation; association; improvement; elevated; temperature; negative; coefficient; resistivity; shape; size; sufficient; resistance; match; requirements; associated; operationally; polycrystalline; crystalline; mounted; lattice; matched; substrate; partially; covered; intimately; contacting; metallization; defines; explosive device; contact therewith; electrical circuitry; temperature coefficient; lattice matched; explosive material; elevated temperature; electrical resistance; device comprising; electrical circuit; electrical resistivity; semiconductor bridge; activation means; material sufficient; /102/

Citation Formats

Bickes, Jr., Robert W., and Schwarz, Alfred C. Semiconductor bridge (SCB) igniter. United States: N. p., 1987. Web.
Bickes, Jr., Robert W., & Schwarz, Alfred C. Semiconductor bridge (SCB) igniter. United States.
Bickes, Jr., Robert W., and Schwarz, Alfred C. Thu . "Semiconductor bridge (SCB) igniter". United States. https://www.osti.gov/servlets/purl/866432.
@article{osti_866432,
title = {Semiconductor bridge (SCB) igniter},
author = {Bickes, Jr., Robert W. and Schwarz, Alfred C},
abstractNote = {In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.},
doi = {},
url = {https://www.osti.gov/biblio/866432}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

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