Process for growing silicon carbide whiskers by undercooling

Patent · Thu Jan 01 00:00:00 EST 1987

OSTI ID:866400

Shalek, Peter D ^[1]

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1. Los Alamos, NM

A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: W-7405-ENG-36
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4702901
• OSTI ID: 866400
• Country of Publication: United States
• Language: English

Related Subjects

process
growing
silicon
carbide
whiskers
undercooling
method
especially
beta
form
heating
schedule
temperature
atmosphere
growth
zone
furnace
heated
cooled
below
induce
nucleation
catalyst
sites
desired
time
results
selection
silicon carbide
carbide whiskers
growth temperature
growth zone
carbide whisker
growing silicon
/423/