Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
- Patchogue, NY
- Lesmo, IT
A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.
- Research Organization:
- Associated Universities, Inc., Upton, NY (United States)
- DOE Contract Number:
- AC02-76CH00016
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Number(s):
- US 4688067
- OSTI ID:
- 866346
- Country of Publication:
- United States
- Language:
- English
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Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
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transport
collection
depleted
semiconductors
combined
action
space
charge
field
due
electrode
voltages
semiconductor
device
method
characterized
providing
wafer
rectifying
junctions
opposing
major
surfaces
including
capacitance
ohmic
contact
combination
bias
voltage
means
associated
circuit
applying
predetermined
effectively
deplete
regions
usable
drift
chamber
detector
coupled
constructed
according
methods
devices
detectors
principles
significantly
particle
position
indicating
resolution
attainable
prior
time
requiring
substantially
fewer
readout
channels
realize
major surfaces
semiconductor wafer
charge coupled
coupled device
ohmic contact
bias voltage
circuit means
space charge
transport device
major surface
position indicating
rectifying junctions
rectifying junction
semiconductor charge
constructed according
combined action
charge field
field due
electrode voltage
drift chamber
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