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Title: Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

Abstract

A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

Inventors:
 [1]
  1. Evergreen, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
866189
Patent Number(s):
US 4652332
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; synthesizing; growing; copper-indium-diselenide; cuinse; crystals; process; preparing; melting; sufficient; quantity; stoichiometric; quantities; cu; crucible; pressure; atmosphere; inert; gas; encapsulate; melt; confine; additional; range; percent; preferred; amounts; lost; crystal; grown; inserting; seed; contact; withdrawing; upwardly; grow; thereon; seed crystal; stoichiometric quantities; inert gas; sufficient quantity; pressure atmosphere; stoichiometric quantity; /117/136/

Citation Formats

Ciszek, Theodore F. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals. United States: N. p., 1987. Web.
Ciszek, Theodore F. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals. United States.
Ciszek, Theodore F. Thu . "Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals". United States. https://www.osti.gov/servlets/purl/866189.
@article{osti_866189,
title = {Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals},
author = {Ciszek, Theodore F},
abstractNote = {A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.},
doi = {},
url = {https://www.osti.gov/biblio/866189}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

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