Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

Patent · 29 December 1986

OSTI ID:866090

Fan, John C. C. ^[1]; Tsaur, Bor-Yeu ^[2]; Gale, Ronald P ^[3]; Davis, Frances M ^[4]

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1. Chestnut Hill, MA
2. Arlington, MA
3. Bedford, MA
4. Framingham, MA

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

• Research Organization: Solar Energy Research Institute
• Assignee: Massachusetts Institute of Technology (Cambridge, MA)
• Patent Number(s): US 4632712
• Application Number: 06/678,364
• OSTI ID: 866090
• Country of Publication: United States
• Language: English

Related Subjects

/117/136/148/438/
achieved
active
cooling
coupled
cycling
densities
deposited
dislocation
dislocation densities
dislocations
employing
epitaxial
epitaxial growth
growing
growing semiconductors
growth
initial
initial stage
interrupted
interrupting
interrupting growth
layer
method
multistage
multistage epitaxial
permits
phase
process
quality
reduced
reducing
reducing dislocations
repeated
repeated thermal
repeating
semiconductors
semiconductors utilizing
stages
technique
thermal
thermal cycling
top
top layer
trapped
utilizing
utilizing repeated
vapor
vapor phase