Information storage medium and method of recording and retrieving information thereon

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865869

Marchant, D D ^[1]; Begej, Stefan ^[2]

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1. Richland, WA
2. Amherst, MA

Information storage medium comprising a semiconductor doped with first and second impurities or dopants. Preferably, one of the impurities is introduced by ion implantation. Conductive electrodes are photolithographically formed on the surface of the medium. Information is recorded on the medium by selectively applying a focused laser beam to discrete regions of the medium surface so as to anneal discrete regions of the medium containing lattice defects introduced by the ion-implanted impurity. Information is retrieved from the storage medium by applying a focused laser beam to annealed and non-annealed regions so as to produce a photovoltaic signal at each region.

• Research Organization: Battelle Memorial Institute, Columbus, OH (United States)
• DOE Contract Number: AC06-76RL01830
• Assignee: Battelle Development Corporation (Columbus, OH)
• Patent Number(s): US 4593306
• OSTI ID: 865869
• Country of Publication: United States
• Language: English

Related Subjects

information
storage
medium
method
recording
retrieving
thereon
comprising
semiconductor
doped
impurities
dopants
preferably
introduced
implantation
conductive
electrodes
photolithographically
formed
surface
recorded
selectively
applying
focused
laser
beam
discrete
regions
anneal
containing
lattice
defects
ion-implanted
impurity
retrieved
annealed
non-annealed
produce
photovoltaic
signal
region
medium comprising
focused laser
laser beam
storage medium
information storage
medium containing
retrieving information
conductive electrode
conductive electrodes
/257/365/